Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-q Microphotonic Electro-optic Modulator

A microphotonic mm-wave modulator using simultaneous RF and optical resonance in an electro-optic medium is presented. Theory and simulation of modulator operation is discussed, and experimental results demonstrating modulation using simultaneous resonance in the mm-wave range are reported. Ó 2001 Elsevier Science Ltd. All rights reserved .

متن کامل

Ultracompact electro-optic phase modulator based on III-V-on-silicon microdisk resonator.

A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled. A power imbalance of ∼0...

متن کامل

Deposited silicon high-speed integrated electro-optic modulator.

We demonstrate a micrometer-scale electro-optic modulator operating at 2.5 Gbps and 10 dB extinction ratio that is fabricated entirely from deposited silicon. The polycrystalline silicon material exhibits properties that simultaneously enable high quality factor optical resonators and sub-nanosecond electrical carrier injection. We use an embedded p(+)n(-)n(+) diode to achieve optical modulatio...

متن کامل

Design of high efficiency multi-GHz SiGe HBT electro-optic modulator.

We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 microm interaction length for TM polarization at lambda = 1.55 microm. The total optical attenuation ...

متن کامل

Athermal silicon microring electro-optic modulator.

We demonstrate a new class of passively temperature stabilized resonant silicon electro-optic modulators. The modulators consist of a ring resonator coupled to a Mach-Zehnder interferometer with tailored thermal properties. We demonstrate 2 GHz continuous modulation over a temperature range of 35 °C and describe the scalability and design rules for such a device.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Semiconductor Science and Technology

سال: 2020

ISSN: 0268-1242,1361-6641

DOI: 10.1088/1361-6641/ab9ea9